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PSMN057-200P,127123
  • Manufacturer No:
    PSMN057-200P,127
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    3949564
  • Description:
    Single N-Channel 200 V 165 mOhm 96 nC 250 W Silicon Flange Mount Mosfet TO-220-3
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  • 10 $2103.215 $21032.15
  • 100 $2082.391 $208239.1
  • 1000 $2061.773 $2061773

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PSMN057-200P,127
  • Manufacturer No:
    PSMN057-200P,127
  • Manufacturer:
    Nexperia
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    PSMN057-200P,127
  • SKU:
    3949564
  • Description:
    Single N-Channel 200 V 165 mOhm 96 nC 250 W Silicon Flange Mount Mosfet TO-220-3

PSMN057-200P,127 Details

Single N-Channel 200 V 165 mOhm 96 nC 250 W Silicon Flange Mount Mosfet TO-220-3

PSMN057-200P,127 Specification Parameters

  • Part Status: Active
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • Pin Count: 3
  • Max Dual Supply Voltage: 200V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Turn On Delay Time: 18 ns
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Continuous Drain Current (ID): 39A
  • Power Dissipation-Max: 250W Tc
  • Pulsed Drain Current-Max (IDM): 156A
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Drain-source On Resistance-Max: 0.057Ohm
  • Rds On (Max) @ Id, Vgs: 57m Ω @ 17A, 10V
  • Surface Mount: NO
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • Drain to Source Breakdown Voltage: 200V
  • Published: 2011
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-220-3
  • Power Dissipation: 250W
  • HTS Code: 8541.29.00.75
  • Series: TrenchMOS?
  • Turn-Off Delay Time: 105 ns
  • Fall Time (Typ): 78 ns
  • Rise Time: 58ns
  • Current - Continuous Drain (Id) @ 25°C: 39A Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V

Nexperia — Manufacturer Introduction

Nexperia
Nexperia is a dedicated global leader in Discretes, Logic and MOSFETs devices. This new company became independent at the beginning of 2017. Focused on efficiency, Nexperia produces consistently reliable semiconductor components at high volume: 85 billion annually. The company’s extensive portfolio meets the stringent standards set by the Automotive industry. And industry-leading small packages, produced in their own manufacturing facilities, combine power and thermal efficiency with best-in-class quality levels. Built on over half a century of expertise, Nexperia has 11,000 employees across Asia, Europe and the U.S. supporting customers globally.

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