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- Manufacturer No：BAS321,115
- Manufacturer：Nexperia USA Inc.
- Category：Diodes - Rectifiers - Single
- Datasheet：BAS321,115
- SKU：3939959
- Description：DIODE GEN PURP 200V 250MA SOD323
User Guide
User Guide
BAS321,115 Details
DIODE GEN PURP 200V 250MA SOD323
BAS321,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Terminal Form: GULL WING
- Min Operating Temperature: -65°C
- Voltage: 250V
- Reverse Voltage: 250V
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Average Rectified Current: 250mA
- Max Power Dissipation: 300mW
- Current: 25A
- Length: 1.8mm
- Peak Non-Repetitive Surge Current: 9A
- Reverse Recovery Time: 50 ns
- Forward Voltage: 1.25V
- Height: 1.05mm
- Package / Case: SC-76, SOD-323
- Operating Temperature - Junction: 150°C Max
- Capacitance @ Vr, F: 2pF @ 0V 1MHz
- Current - Average Rectified (Io): 250mA DC
- Base Part Number: BAS321
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Pin Count: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- REACH SVHC: No SVHC
- Max Reverse Voltage (DC): 200V
- Max Repetitive Reverse Voltage (Vrrm): 250V
- Factory Lead Time: 4 Weeks
- Diode Element Material: SILICON
- Diode Type: Standard
- Published: 1999
- Forward Current: 250mA
- Power Dissipation: 300mW
- Peak Reverse Current: 100nA
- Max Surge Current: 9A
- Max Forward Surge Current (Ifsm): 9A
- Recovery Time: 50 ns
- Width: 1.35mm
- HTS Code: 8541.10.00.70
- Weight: 4.535924g
- Reference Standard: IEC-60134
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Current - Reverse Leakage @ Vr: 100nA @ 200V
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