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- Manufacturer No：BC849CW,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：BC849CW,115
- SKU：3961840
- Description：BC849W; BC850W - NPN general purpose transistors
User Guide
User Guide
BC849CW,115 Details
BC849W; BC850W - NPN general purpose transistors
BC849CW,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Factory Lead Time: 4 Weeks
- Published: 2009
- Element Configuration: Single
- Collector Emitter Breakdown Voltage: 30V
- Collector Base Voltage (VCBO): 30V
- Max Collector Current: 100mA
- Transition Frequency: 100MHz
- Max Power Dissipation: 200mW
- Series: Automotive, AEC-Q101
- Polarity/Channel Type: NPN
- Length: 2.2mm
- Width: 1.35mm
- Collector Emitter Saturation Voltage: 600mV
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA 5V
- Base Part Number: BC849
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Emitter Base Voltage (VEBO): 5V
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Height: 1mm
- Collector Emitter Voltage (VCEO): 30V
- Max Breakdown Voltage: 30V
- Frequency: 100MHz
- Gain Bandwidth Product: 100MHz
- Power Dissipation: 200mW
- Transistor Type: NPN
- Operating Temperature: 150°C TJ
- Transistor Application: AMPLIFIER
- Package / Case: SC-70, SOT-323
- Current - Collector Cutoff (Max): 15nA ICBO
- hFE Min: 420
- VCEsat-Max: 0.6 V
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