BC859B,215Nexperia USA Inc.
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    BC859B,215123
    • Manufacturer No：
      BC859B,215
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Transistors - Bipolar (BJT) - Single
    • Datasheet：
    • SKU：
      3941066
    • Description：
      Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW Surface Mount TO-236AB
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    Inventory:4605
    • Qty Unit Price price
    • 1 $0.222 $0.222
    • 10 $0.219 $2.19
    • 100 $0.216 $21.6
    • 1000 $0.213 $213
    • 10000 $0.21 $2100

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    BC859B,215
    • Manufacturer No：
      BC859B,215
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Transistors - Bipolar (BJT) - Single
    • Datasheet：
      BC859B,215
    • SKU：
      3941066
    • Description：
      Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW Surface Mount TO-236AB

    User Guide

    User Guide

    BC859B,215 Details

    Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW Surface Mount TO-236AB

    BC859B,215 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Number of Terminations: 3
    • Pin Count: 3
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Power Dissipation: 250mW
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Height: 1mm
    • Collector Emitter Voltage (VCEO): 30V
    • Max Breakdown Voltage: 30V
    • Max Collector Current: 100mA
    • Transition Frequency: 100MHz
    • Width: 1.4mm
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Polarity/Channel Type: PNP
    • hFE Min: 220
    • Current - Collector Cutoff (Max): 15nA ICBO
    • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
    • Base Part Number: BC859
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Emitter Base Voltage (VEBO): 5V
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Max Power Dissipation: 250mW
    • Factory Lead Time: 4 Weeks
    • Published: 2009
    • Element Configuration: Single
    • Collector Emitter Breakdown Voltage: 30V
    • Collector Base Voltage (VCBO): 30V
    • Length: 3mm
    • Frequency: 100MHz
    • Gain Bandwidth Product: 100MHz
    • Series: Automotive, AEC-Q101
    • Transistor Type: PNP
    • Operating Temperature: 150°C TJ
    • Transistor Application: AMPLIFIER
    • Collector Emitter Saturation Voltage: 650mV
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA 5V
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