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BSS84AKM,315123
  • Manufacturer No:
    BSS84AKM,315
  • Manufacturer:
    Nexperia USA Inc.
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    3974166
  • Description:
    BSS84AKM - 50 V, 230 mA P-channel Trench MOSFET
  • Quantity:
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Inventory:33410
  • Qty Unit Price price
  • 1 $552.563 $552.563
  • 10 $547.092 $5470.92
  • 100 $541.675 $54167.5
  • 1000 $536.311 $536311
  • 10000 $531 $5310000

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BSS84AKM,315
  • Manufacturer No:
    BSS84AKM,315
  • Manufacturer:
    Nexperia USA Inc.
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    BSS84AKM,315
  • SKU:
    3974166
  • Description:
    BSS84AKM - 50 V, 230 mA P-channel Trench MOSFET

BSS84AKM,315 Details

BSS84AKM - 50 V, 230 mA P-channel Trench MOSFET

BSS84AKM,315 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Surface Mount: YES
  • Lead Free: Lead Free
  • Factory Lead Time: 8 Weeks
  • Number of Pins: 3
  • Drain to Source Voltage (Vdss): 50V
  • Published: 2011
  • Max Junction Temperature (Tj): 150°C
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • Terminal Position: BOTTOM
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Fall Time (Typ): 25 ns
  • Turn On Delay Time: 13 ns
  • Drain to Source Breakdown Voltage: -50V
  • Additional Feature: LOGIC LEVEL COMPATIBLE
  • Series: Automotive, AEC-Q101, TrenchMOS?
  • Vgs(th) (Max) @ Id: 2.1V @ 250μA
  • Power Dissipation: 340mW
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Pin Count: 3
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Ambient Temperature Range High: 150°C
  • Transistor Element Material: SILICON
  • Height: 500μm
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • FET Type: P-Channel
  • Rise Time: 11 ns
  • Max Dual Supply Voltage: -50V
  • Turn-Off Delay Time: 48 ns
  • Package / Case: SC-101, SOT-883
  • Drain-source On Resistance-Max: 8.5Ohm
  • Current - Continuous Drain (Id) @ 25°C: 230mA Ta
  • Continuous Drain Current (ID): -230mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ω @ 100mA, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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