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- Manufacturer No：BUK98180-100A/CUX
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BUK98180-100A/CUX
- SKU：3975717
- Description：MOSFET N-CH 100V 4.6A SOT223
User Guide
User Guide
BUK98180-100A/CUX Details
MOSFET N-CH 100V 4.6A SOT223
BUK98180-100A/CUX Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Terminations: 4
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Max Dual Supply Voltage: 100V
- Max Junction Temperature (Tj): 150°C
- Gate to Source Voltage (Vgs): 10V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Height: 1.8mm
- Case Connection: DRAIN
- Fall Time (Typ): 25 ns
- Package / Case: TO-261-4, TO-261AA
- Turn-Off Delay Time: 18 ns
- Vgs (Max): ±10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Current - Continuous Drain (Id) @ 25°C: 4.6A Tc
- Rds On (Max) @ Id, Vgs: 173m Ω @ 5A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Contact Plating: Tin
- Number of Pins: 4
- Pin Count: 4
- Factory Lead Time: 16 Weeks
- Drain to Source Breakdown Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2007
- Transistor Element Material: SILICON
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Terminal Finish: TIN
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Power Dissipation: 8W
- Turn On Delay Time: 7 ns
- Continuous Drain Current (ID): 4.6A
- Series: TrenchMOS?
- Rise Time: 89 ns
- Power Dissipation-Max: 8W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V
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