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- Manufacturer No：BUK9K52-60E,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：BUK9K52-60E,115
- SKU：3967525
- Description：Dual N-Channel 60 V 49 mOhm 10 nC SMT Logic Level Mosfet - LFPAK56
User Guide
User Guide
BUK9K52-60E,115 Details
Dual N-Channel 60 V 49 mOhm 10 nC SMT Logic Level Mosfet - LFPAK56
BUK9K52-60E,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Packaging: Tape & Reel (TR)
- Surface Mount: YES
- Contact Plating: Tin
- Pin Count: 8
- Number of Terminations: 4
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 20
- Published: 2014
- Gate to Source Voltage (Vgs): 10V
- Terminal Position: SINGLE
- Operating Temperature: -55°C~175°C TJ
- Continuous Drain Current (ID): 16A
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Additional Feature: AVALANCHE RATED
- FET Type: 2 N-Channel (Dual)
- Reference Standard: AEC-Q101; IEC-60134
- Series: Automotive, AEC-Q101, TrenchMOS?
- Power Dissipation: 32W
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Rise Time: 10.1 ns
- Turn-Off Delay Time: 10.7 ns
- Rds On (Max) @ Id, Vgs: 49m Ω @ 5A, 10V
- Avalanche Energy Rating (Eas): 11.9 mJ
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- Max Dual Supply Voltage: 60V
- Element Configuration: Dual
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Fall Time (Typ): 9 ns
- FET Feature: Logic Level Gate
- Turn On Delay Time: 6.2 ns
- JESD-30 Code: R-PSSO-G4
- Max Power Dissipation: 32W
- Pulsed Drain Current-Max (IDM): 64A
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Drain-source On Resistance-Max: 0.055Ohm
- Package / Case: SOT-1205, 8-LFPAK56
- Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
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