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- Manufacturer No：BUK9Y65-100E,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BUK9Y65-100E,115
- SKU：3950554
- Description：MOSFET N-CH 100V LFPAK
User Guide
User Guide
BUK9Y65-100E,115 Details
MOSFET N-CH 100V LFPAK
BUK9Y65-100E,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- JESD-609 Code: e3
- Drive Voltage (Max Rds On,Min Rds On): 5V
- Number of Pins: 4
- Pin Count: 4
- Terminal Form: GULL WING
- Max Dual Supply Voltage: 100V
- Terminal Finish: Tin (Sn)
- Gate to Source Voltage (Vgs): 15V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Temperature: -55°C~175°C TJ
- Case Connection: DRAIN
- Height: 15.875mm
- Pulsed Drain Current-Max (IDM): 76A
- Package / Case: SC-100, SOT-669
- JEDEC-95 Code: MO-235
- Drain-source On Resistance-Max: 0.065Ohm
- Turn-Off Delay Time: 19.3 ns
- Fall Time (Typ): 12.6 ns
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
- Avalanche Energy Rating (Eas): 25.3 mJ
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Color: Black
- Factory Lead Time: 12 Weeks
- Number of Terminations: 4
- Published: 2013
- Drain to Source Breakdown Voltage: 100V
- Reach Compliance Code: not_compliant
- Element Configuration: Single
- Material: Metal
- Technology: MOSFET (Metal Oxide)
- Series: Automotive, AEC-Q101
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 19A
- Additional Feature: AVALANCHE RATED
- Vgs (Max): ±10V
- Turn On Delay Time: 8.1 ns
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Current - Continuous Drain (Id) @ 25°C: 19A Tc
- Rise Time: 13.6 ns
- Diameter: 15.875 mm
- Power Dissipation-Max: 64W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1523pF @ 25V
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