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- Manufacturer No：NX7002BKXBZ
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：NX7002BKXBZ
- SKU：3947813
- Description：MOSFET 2N-CH 60V 0.26A 6DFN
User Guide
User Guide
NX7002BKXBZ Details
MOSFET 2N-CH 60V 0.26A 6DFN
NX7002BKXBZ Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminations: 6
- Drain to Source Voltage (Vdss): 60V
- Published: 2015
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Case Connection: DRAIN
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID): 260mA
- Reference Standard: IEC-60134
- Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package / Case: 6-XFDFN Exposed Pad
- Drain Current-Max (Abs) (ID): 0.33A
- Power - Max: 285mW
- Rds On (Max) @ Id, Vgs: 2.8 Ω @ 200mA, 10V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pin Count: 6
- DS Breakdown Voltage-Min: 60V
- Factory Lead Time: 4 Weeks
- Terminal Form: NO LEAD
- Packaging: Cut Tape (CT)
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PDSO-N6
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Drain-source On Resistance-Max: 3.2Ohm
- Vgs(th) (Max) @ Id: 2.1V @ 250μA
- Max Power Dissipation: 285mW
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
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