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PBSS4140DPN,115123
  • Manufacturer No:
    PBSS4140DPN,115
  • Manufacturer:
    Nexperia USA Inc.
  • Category:
    Transistors - Bipolar (BJT) - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    3966490
  • Description:
    TRANS NPN/PNP 40V 1A 6TSOP
  • Quantity:
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Inventory:71920
  • Qty Unit Price price
  • 1 $0.46 $0.46
  • 10 $0.455 $4.55
  • 100 $0.45 $45
  • 1000 $0.445 $445
  • 10000 $0.44 $4400

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PBSS4140DPN,115
  • Manufacturer No:
    PBSS4140DPN,115
  • Manufacturer:
    Nexperia USA Inc.
  • Category:
    Transistors - Bipolar (BJT) - Arrays
  • Datasheet:
    PBSS4140DPN,115
  • SKU:
    3966490
  • Description:
    TRANS NPN/PNP 40V 1A 6TSOP

PBSS4140DPN,115 Details

TRANS NPN/PNP 40V 1A 6TSOP

PBSS4140DPN,115 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 6
  • Pin Count: 6
  • REACH SVHC: No SVHC
  • Element Configuration: Dual
  • Terminal Finish: Tin (Sn)
  • Height: 1mm
  • Collector Emitter Breakdown Voltage: 40V
  • Collector Base Voltage (VCBO): 40V
  • Transistor Application: SWITCHING
  • Frequency: 150MHz
  • Gain Bandwidth Product: 150MHz
  • Length: 3.1mm
  • Width: 1.7mm
  • Polarity: NPN, PNP
  • Package / Case: SC-74, SOT-457
  • Max Power Dissipation: 370mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA 5V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Emitter Base Voltage (VEBO): 5V
  • Number of Pins: 6
  • Terminal Form: GULL WING
  • Factory Lead Time: 4 Weeks
  • Max Collector Current: 1A
  • Transistor Element Material: SILICON
  • Published: 2001
  • Collector Emitter Voltage (VCEO): 40V
  • Max Breakdown Voltage: 40V
  • Operating Temperature: 150°C TJ
  • Transition Frequency: 150MHz
  • Power - Max: 600mW
  • Current - Collector Cutoff (Max): 100nA
  • Collector Emitter Saturation Voltage: 500mV
  • Transistor Type: NPN, PNP
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Power Dissipation: 370mW

Excellent

Based on reviews

Excellent

Based on reviews

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