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- Manufacturer No：PBSS4250X,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：PBSS4250X,115
- SKU：3961536
- Description：NEXPERIA - PBSS4250X,115 - Bipolar (BJT) Single Transistor, NPN, 50 V, 550 mW, 2 A, 300 hFE
User Guide
User Guide
PBSS4250X,115 Details
NEXPERIA - PBSS4250X,115 - Bipolar (BJT) Single Transistor, NPN, 50 V, 550 mW, 2 A, 300 hFE
PBSS4250X,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Max Breakdown Voltage: 50V
- Collector Base Voltage (VCBO): 50V
- Peak Reflow Temperature (Cel): 260
- Power Dissipation: 1W
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Published: 2003
- Transition Frequency: 100MHz
- Terminal Form: FLAT
- Transistor Type: NPN
- Operating Temperature: 150°C TJ
- Width: 2.6mm
- Case Connection: COLLECTOR
- Package / Case: TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A 2V
- Base Part Number: PBSS4250
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Emitter Base Voltage (VEBO): 5V
- Number of Pins: 3
- Collector Emitter Breakdown Voltage: 50V
- Collector Emitter Voltage (VCEO): 50V
- REACH SVHC: No SVHC
- Max Power Dissipation: 1W
- Factory Lead Time: 4 Weeks
- Height: 1.6mm
- Transistor Element Material: SILICON
- Max Collector Current: 2A
- Frequency: 100MHz
- Gain Bandwidth Product: 100MHz
- Transistor Application: SWITCHING
- Polarity/Channel Type: NPN
- Current - Collector Cutoff (Max): 100nA
- Length: 4.6mm
- Weight: 4.535924g
- Collector Emitter Saturation Voltage: 380mV
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
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