Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:8056
- Qty Unit Price price
- 1 $80.129 $80.129
- 10 $79.335 $793.35
- 100 $78.549 $7854.9
- 1000 $77.771 $77771
- 10000 $77 $770000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：PBSS8110Z,135
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：PBSS8110Z,135
- SKU：3973050
- Description：NEXPERIA - PBSS8110Z,135 - Bipolarer Einzeltransistor (BJT), NPN, 100 V, 650 mW, 1 A, 150 hFE
User Guide
User Guide
PBSS8110Z,135 Details
NEXPERIA - PBSS8110Z,135 - Bipolarer Einzeltransistor (BJT), NPN, 100 V, 650 mW, 1 A, 150 hFE
PBSS8110Z,135 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Emitter Base Voltage (VEBO): 5V
- Number of Terminations: 4
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Collector Emitter Breakdown Voltage: 100V
- Max Breakdown Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Current: 1A
- Transistor Element Material: SILICON
- Published: 2003
- Transition Frequency: 100MHz
- Collector Base Voltage (VCBO): 120V
- Transistor Type: NPN
- Operating Temperature: 150°C TJ
- Height: 1.7mm
- Power Dissipation: 1.4W
- Length: 6.7mm
- Collector Emitter Saturation Voltage: 200mV
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
- Base Part Number: PBSS8110
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 4
- Pin Count: 4
- REACH SVHC: No SVHC
- Voltage: 100V
- Collector Emitter Voltage (VCEO): 100V
- Factory Lead Time: 4 Weeks
- Max Collector Current: 1A
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Frequency: 100MHz
- Gain Bandwidth Product: 100MHz
- Transistor Application: SWITCHING
- Polarity/Channel Type: NPN
- Current - Collector Cutoff (Max): 100nA
- Max Power Dissipation: 1.4W
- Case Connection: COLLECTOR
- Width: 3.7mm
- Package / Case: TO-261-4, TO-261AA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA 10V
Search for similar products
PBSS8110Z,135 Similar Products
The four parts on the right have similar specifications to Nexperia USA Inc. & PBSS8110Z,135
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
