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- Manufacturer No：PDTD123YT,215
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet：PDTD123YT,215
- SKU：3952016
- Description：TRANS PREBIAS NPN 250MW TO236AB
User Guide
User Guide
PDTD123YT,215 Details
TRANS PREBIAS NPN 250MW TO236AB
PDTD123YT,215 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Emitter Base Voltage (VEBO): 5V
- Number of Pins: 3
- Collector Emitter Breakdown Voltage: 50V
- Collector Emitter Voltage (VCEO): 50V
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Max Power Dissipation: 250mW
- Time@Peak Reflow Temperature-Max (s): 40
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Length: 3mm
- Width: 1.4mm
- Polarity: NPN
- Current - Collector Cutoff (Max): 500nA
- Weight: 4.535924g
- Transistor Type: NPN - Pre-Biased
- Resistor - Base (R1): 2.2 k Ω
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA 5V
- Base Part Number: PDTD123
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Terminations: 3
- Pin Count: 3
- Max Breakdown Voltage: 50V
- Operating Supply Voltage: 50V
- REACH SVHC: No SVHC
- Min Operating Temperature: -65°C
- Factory Lead Time: 4 Weeks
- Max Operating Temperature: 150°C
- Published: 2005
- Height: 1mm
- Max Collector Current: 500mA
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage: 300mV
- Max Output Current: 500A
- Resistor - Emitter Base (R2): 10 k Ω
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Additional Feature: BUILT-IN BIAS RESISTOR RATIO IS 0.21
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