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- Manufacturer No：PHK12NQ03LT,518
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：PHK12NQ03LT,518
- SKU：3960835
- Description：MOSFET N-CH 30V 11.8A SOT96
User Guide
User Guide
PHK12NQ03LT,518 Details
MOSFET N-CH 30V 11.8A SOT96
PHK12NQ03LT,518 Specification Parameters
- Mounting Type: Surface Mount
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 8
- Pin Count: 8
- Qualification Status: Not Qualified
- Factory Lead Time: 16 Weeks
- Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 30V
- Moisture Sensitivity Level (MSL): 2 (1 Year)
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Power Dissipation-Max: 2.5W Ta
- Pulsed Drain Current-Max (IDM): 35.3A
- Drain-source On Resistance-Max: 0.0105Ohm
- Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 16V
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Surface Mount: YES
- JESD-609 Code: e4
- Number of Terminations: 8
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Drain to Source Voltage (Vdss): 30V
- Published: 2001
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Drain Current-Max (Abs) (ID): 12A
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Series: TrenchMOS?
- JEDEC-95 Code: MS-012AA
- Continuous Drain Current (ID): 11.8A
- Avalanche Energy Rating (Eas): 440 mJ
- Rds On (Max) @ Id, Vgs: 10.5m Ω @ 12A, 10V
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