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- Manufacturer No：PHP191NQ06LT,127
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：PHP191NQ06LT,127
- SKU：3949726
- Description：MOSFET N-CH 55V 75A TO220AB
User Guide
User Guide
PHP191NQ06LT,127 Details
MOSFET N-CH 55V 75A TO220AB
PHP191NQ06LT,127 Specification Parameters
- Part Status: Active
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Channels: 1
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 15V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Drain to Source Breakdown Voltage: 55V
- Package / Case: TO-220-3
- Power Dissipation: 300W
- Length: 10.3mm
- Continuous Drain Current (ID): 75A
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Weight: 6.000006g
- Power Dissipation-Max: 300W Tc
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Drain-source On Resistance-Max: 0.0044Ohm
- Fall Time (Typ): 178 ns
- Turn-Off Delay Time: 273 ns
- Input Capacitance (Ciss) (Max) @ Vds: 7665pF @ 25V
- Surface Mount: NO
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- Published: 2010
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Max Dual Supply Voltage: 55V
- Width: 4.7mm
- Case Connection: DRAIN
- Height: 9.4mm
- Vgs (Max): ±15V
- Pulsed Drain Current-Max (IDM): 240A
- Series: TrenchMOS?
- Current - Continuous Drain (Id) @ 25°C: 75A Tc
- Turn On Delay Time: 63 ns
- Avalanche Energy Rating (Eas): 560 mJ
- Rise Time: 232 ns
- Rds On (Max) @ Id, Vgs: 3.7m Ω @ 25A, 10V
- Gate Charge (Qg) (Max) @ Vgs: 95.6nC @ 5V
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