PHP28NQ15T,127
Nexperia USA Inc.
Part Status
ActiveSurface Mount
NORoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleNumber of Elements
1ECCN Code
EAR99Radiation Hardening
NoJESD-609 Code
e3Factory Lead Time
12 WeeksPackaging
TubeNumber of Terminations
3Number of Pins
3Pin Count
3Drain to Source Breakdown Voltage
150VMax Dual Supply Voltage
150VPublished
2010Drive Voltage (Max Rds On,Min Rds On)
10VTerminal Finish
Tin (Sn)Transistor Element Material
SILICONElement Configuration
SingleGate to Source Voltage (Vgs)
20VPower Dissipation
150WFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Transistor Application
SWITCHINGOperating Temperature
-55°C~175°C TJOperating Mode
ENHANCEMENT MODEVgs (Max)
±20VPackage / Case
TO-220-3Case Connection
DRAINRise Time
20 nsTurn On Delay Time
12 nsTurn-Off Delay Time
12 nsFall Time (Typ)
55 nsHTS Code
8541.29.00.75Vgs(th) (Max) @ Id
4V @ 1mASeries
TrenchMOS?Power Dissipation-Max
150W TcGate Charge (Qg) (Max) @ Vgs
24nC @ 10VAvalanche Energy Rating (Eas)
100 mJDrain-source On Resistance-Max
0.065OhmPulsed Drain Current-Max (IDM)
57.1AContinuous Drain Current (ID)
28.5AInput Capacitance (Ciss) (Max) @ Vds
1250pF @ 30VCurrent - Continuous Drain (Id) @ 25°C
28.5A Tj