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- Manufacturer No：PMBT2222,215
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：PMBT2222,215
- SKU：3975328
- Description：Bipolar (BJT) Transistor NPN 30 V 600 mA 250MHz 250 mW Surface Mount TO-236AB
User Guide
User Guide
PMBT2222,215 Details
Bipolar (BJT) Transistor NPN 30 V 600 mA 250MHz 250 mW Surface Mount TO-236AB
PMBT2222,215 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Emitter Base Voltage (VEBO): 5V
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Max Power Dissipation: 250mW
- Factory Lead Time: 4 Weeks
- Time@Peak Reflow Temperature-Max (s): 40
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Collector Emitter Voltage (VCEO): 30V
- Transistor Application: SWITCHING
- Transistor Type: NPN
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Transition Frequency: 250MHz
- Max Collector Current: 600mA
- Operating Temperature: 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA 10V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Base Part Number: PMBT2222
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Collector Base Voltage (VCBO): 60V
- Power Dissipation: 250mW
- hFE Min: 30
- Published: 2010
- Transistor Element Material: SILICON
- Collector Emitter Breakdown Voltage: 30V
- Max Breakdown Voltage: 30V
- Series: Automotive, AEC-Q101
- Polarity/Channel Type: NPN
- Frequency: 250MHz
- Gain Bandwidth Product: 250MHz
- Collector-Base Capacitance-Max: 8pF
- Turn Off Time-Max (toff): 250 ns
- Current - Collector Cutoff (Max): 10nA ICBO
- Additional Feature: HIGH CURRENT DRIVER
- Manufacturer Package Identifier: PMBT2222_PMBT2222A
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