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- Manufacturer No：PMV50ENEAR
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：PMV50ENEAR
- SKU：3954400
- Description：MOSFET PMV50ENEA/TO-236AB/REEL 7" Q3/
User Guide
User Guide
PMV50ENEAR Details
MOSFET PMV50ENEA/TO-236AB/REEL 7" Q3/
PMV50ENEAR Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Published: 2016
- Factory Lead Time: 4 Weeks
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Series: Automotive, AEC-Q101
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- JEDEC-95 Code: TO-236AB
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 3.9A Ta
- Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Pin Count: 3
- Terminal Form: GULL WING
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- JESD-30 Code: R-PDSO-G3
- Continuous Drain Current (ID): 3.9A
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Reference Standard: AEC-Q101; IEC-60134
- Drain-source On Resistance-Max: 0.043Ohm
- Power Dissipation-Max: 510mW Ta 3.9W Tc
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