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- Manufacturer No：PSMN1R7-30YL,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：PSMN1R7-30YL,115
- SKU：3947966
- Description：MOSFET N-CH 30V 100A LFPAK
User Guide
User Guide
PSMN1R7-30YL,115 Details
MOSFET N-CH 30V 100A LFPAK
PSMN1R7-30YL,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 4
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Finish: Tin (Sn)
- Terminal Position: SINGLE
- DS Breakdown Voltage-Min: 30V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- JESD-30 Code: R-PSSO-G4
- Package / Case: SC-100, SOT-669
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Pulsed Drain Current-Max (IDM): 790A
- Avalanche Energy Rating (Eas): 241 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 5057pF @ 12V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Factory Lead Time: 12 Weeks
- Pin Count: 4
- Terminal Form: GULL WING
- Published: 2011
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 100A
- Case Connection: DRAIN
- HTS Code: 8541.29.00.75
- Current - Continuous Drain (Id) @ 25°C: 100A Tc
- JEDEC-95 Code: MO-235
- Drain-source On Resistance-Max: 0.0026Ohm
- Power Dissipation-Max: 109W Tc
- Rds On (Max) @ Id, Vgs: 1.7m Ω @ 15A, 10V
- Gate Charge (Qg) (Max) @ Vgs: 77.9nC @ 10V
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