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- Manufacturer No：PSMN5R6-100PS,127
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：PSMN5R6-100PS,127
- SKU：3960517
- Description：MOSFET N-CH 100V 100A TO220AB
User Guide
User Guide
PSMN5R6-100PS,127 Details
MOSFET N-CH 100V 100A TO220AB
PSMN5R6-100PS,127 Specification Parameters
- Part Status: Active
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Breakdown Voltage: 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Width: 6.35mm
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 100A
- Case Connection: DRAIN
- Weight: 4.535924g
- Turn On Delay Time: 31 ns
- Fall Time (Typ): 34 ns
- Turn-Off Delay Time: 83 ns
- Drain-source On Resistance-Max: 0.0056Ohm
- Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
- Avalanche Energy Rating (Eas): 468 mJ
- Surface Mount: NO
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- Published: 2012
- Max Dual Supply Voltage: 100V
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Length: 6.35mm
- Height: 6.35mm
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Current - Continuous Drain (Id) @ 25°C: 100A Tc
- Rise Time: 46 ns
- Power Dissipation: 306W
- Power Dissipation-Max: 306W Tc
- Rds On (Max) @ Id, Vgs: 5.6m Ω @ 25A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8061pF @ 50V
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