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- Manufacturer No：PUMD10,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Datasheet：PUMD10,115
- SKU：3962308
- Description：PUMD10 - NPN/PNP double Resistor-Equipped Transistor; R1 = 2.2 kO, R2 = 47 kO
User Guide
User Guide
PUMD10,115 Details
PUMD10 - NPN/PNP double Resistor-Equipped Transistor; R1 = 2.2 kO, R2 = 47 kO
PUMD10,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Voltage - Collector Emitter Breakdown (Max): 50V
- Number of Pins: 6
- Terminal Form: GULL WING
- Factory Lead Time: 4 Weeks
- Operating Temperature (Max): 150°C
- Transistor Element Material: SILICON
- Published: 2003
- Power - Max: 300mW
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Polarity: NPN, PNP
- Transition Frequency: 230MHz
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Resistor - Base (R1): 2.2k Ω
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA 5V
- Base Part Number: MD10
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Packaging: Tape & Reel (TR)
- Surface Mount: YES
- Qualification Status: Not Qualified
- Number of Terminations: 6
- Pin Count: 6
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Terminal Finish: Tin (Sn)
- Current - Collector (Ic) (Max): 100mA
- Transistor Application: SWITCHING
- Current - Collector Cutoff (Max): 100nA ICBO
- HTS Code: 8541.21.00.95
- Resistor - Emitter Base (R2): 47k Ω
- Frequency - Transition: 230MHz
- Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250μA, 5mA
- Additional Feature: BUILT-IN BIAS RESISTOR RATIO IS 21
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