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BC337-25RL1G123
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  • 1000 $6.718 $6718

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BC337-25RL1G
  • Manufacturer No:
    BC337-25RL1G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    BC337-25RL1G
  • SKU:
    3632727
  • Description:
    Bipolar (BJT) Transistor NPN 45 V 800 mA 210MHz 625 mW Through Hole TO-92 (TO-226)

BC337-25RL1G Details

Bipolar (BJT) Transistor NPN 45 V 800 mA 210MHz 625 mW Through Hole TO-92 (TO-226)

BC337-25RL1G Specification Parameters

  • Surface Mount: NO
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Pin Count: 3
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Terminal Position: BOTTOM
  • JESD-609 Code: e1
  • Transistor Type: NPN
  • Contact Plating: Copper, Silver, Tin
  • Max Collector Current: 800mA
  • Collector Emitter Voltage (VCEO): 45V
  • Max Breakdown Voltage: 45V
  • Subcategory: Other Transistors
  • Length: 5.2mm
  • Height: 5.33mm
  • Max Power Dissipation: 625mW
  • Weight: 4.535924g
  • Width: 4.19mm
  • Gain Bandwidth Product: 210MHz
  • Lifecycle Status: LAST SHIPMENTS (Last Updated: 1 day ago)
  • Additional Feature: EUROPEAN PART NUMBER
  • Base Part Number: BC337
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Packaging: Tape & Reel (TR)
  • RoHS Status: RoHS Compliant
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Emitter Base Voltage (VEBO): 5V
  • Number of Pins: 3
  • Collector Base Voltage (VCBO): 50V
  • Peak Reflow Temperature (Cel): 260
  • Published: 2005
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
  • Polarity/Channel Type: NPN
  • Current Rating: 800mA
  • Collector Emitter Breakdown Voltage: 45V
  • Voltage - Rated DC: 45V
  • Current - Collector Cutoff (Max): 100nA
  • hFE Min: 160
  • Transistor Application: AMPLIFIER
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Power Dissipation: 625mW
  • Collector Emitter Saturation Voltage: 700mV
  • Frequency: 210MHz
  • Transition Frequency: 210MHz
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA 1V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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