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- Manufacturer No：FCD4N60TM
- Manufacturer：ON Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：FCD4N60TM
- SKU：4138939
- Description：N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 O, DPAK
User Guide
User Guide
FCD4N60TM Details
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 O, DPAK
FCD4N60TM Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Pins: 3
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Factory Lead Time: 13 Weeks
- Transistor Element Material: SILICON
- Voltage - Rated DC: 600V
- Dual Supply Voltage: 600V
- Power Dissipation: 50W
- FET Type: N-Channel
- Lifecycle Status: ACTIVE (Last Updated: 4 days ago)
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Length: 6.73mm
- Fall Time (Typ): 30 ns
- Resistance: 1.2Ohm
- Width: 6.22mm
- Continuous Drain Current (ID): 3.9A
- Turn On Delay Time: 16 ns
- Nominal Vgs: 5 V
- Weight: 260.37mg
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
- Rds On (Max) @ Id, Vgs: 1.2 Ω @ 2A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Threshold Voltage: 5V
- Published: 2013
- Termination: SMD/SMT
- Max Junction Temperature (Tj): 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- Gate to Source Voltage (Vgs): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs (Max): ±30V
- Rise Time: 45 ns
- Current Rating: 3.9A
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Turn-Off Delay Time: 36 ns
- Power Dissipation-Max: 50W Tc
- Series: SuperFET?
- Current - Continuous Drain (Id) @ 25°C: 3.9A Tc
- Height: 2.517mm
- Base Part Number: FCD4N60
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ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
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