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FCD9N60NTM123
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FCD9N60NTM
  • Manufacturer No:
    FCD9N60NTM
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FCD9N60NTM
  • SKU:
    4043840
  • Description:
    MOSFET N-CH 600V 9A DPAK

FCD9N60NTM Details

MOSFET N-CH 600V 9A DPAK

FCD9N60NTM Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Factory Lead Time: 12 Weeks
  • Qualification Status: Not Qualified
  • REACH SVHC: No SVHC
  • Reach Compliance Code: not_compliant
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 30V
  • Height: 2.39mm
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Length: 6.73mm
  • Drain Current-Max (Abs) (ID): 9A
  • Vgs (Max): ±30V
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Fall Time (Typ): 11.5 ns
  • Current - Continuous Drain (Id) @ 25°C: 9A Tc
  • Turn On Delay Time: 12.7 ns
  • Turn-Off Delay Time: 28.7 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 100V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Threshold Voltage: 3V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 600V
  • Published: 2004
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Lifecycle Status: ACTIVE (Last Updated: 5 days ago)
  • JESD-30 Code: R-PSSO-G2
  • Subcategory: FET General Purpose Power
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Continuous Drain Current (ID): 9A
  • Width: 6.22mm
  • Pulsed Drain Current-Max (IDM): 27A
  • Weight: 260.37mg
  • Rise Time: 9.6 ns
  • Series: SupreMOS?
  • Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V
  • Rds On (Max) @ Id, Vgs: 385m Ω @ 4.5A, 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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