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FDC606P123
  • Manufacturer No:
    FDC606P
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4133805
  • Description:
    ON SEMICONDUCTOR - FDC606P - P CHANNEL MOSFET, -12V, 6A, SUPER SOT-6
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Inventory:1
  • Qty Unit Price price
  • 1 $1317.528 $1317.528
  • 10 $1304.483 $13044.83
  • 100 $1291.567 $129156.7
  • 1000 $1278.779 $1278779
  • 10000 $1266.117 $12661170

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FDC606P
  • Manufacturer No:
    FDC606P
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDC606P
  • SKU:
    4133805
  • Description:
    ON SEMICONDUCTOR - FDC606P - P CHANNEL MOSFET, -12V, 6A, SUPER SOT-6

FDC606P Details

ON SEMICONDUCTOR - FDC606P - P CHANNEL MOSFET, -12V, 6A, SUPER SOT-6

FDC606P Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Terminations: 6
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Max Junction Temperature (Tj): 150°C
  • Element Configuration: Single
  • Published: 2001
  • Drain Current-Max (Abs) (ID): 6A
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Width: 1.7mm
  • Drain to Source Breakdown Voltage: -12V
  • Dual Supply Voltage: -12V
  • Fall Time (Typ): 70 ns
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Series: PowerTrench?
  • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
  • Resistance: 26mOhm
  • Power Dissipation-Max: 1.6W Ta
  • Turn-Off Delay Time: 89 ns
  • Current Rating: -6A
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 26m Ω @ 6A, 4.5V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Factory Lead Time: 10 Weeks
  • Number of Pins: 6
  • Termination: SMD/SMT
  • Drain to Source Voltage (Vdss): 12V
  • Transistor Element Material: SILICON
  • Length: 3mm
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Height: 1.1mm
  • Gate to Source Voltage (Vgs): 8V
  • Subcategory: Other Transistors
  • Rise Time: 10 ns
  • Voltage - Rated DC: -12V
  • FET Type: P-Channel
  • Power Dissipation: 1.6W
  • Turn On Delay Time: 11 ns
  • Vgs (Max): ±8V
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Threshold Voltage: -500mV
  • Current - Continuous Drain (Id) @ 25°C: 6A Ta
  • Weight: 36mg
  • Continuous Drain Current (ID): -6A
  • Nominal Vgs: -500 mV
  • Input Capacitance (Ciss) (Max) @ Vds: 1699pF @ 6V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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