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FDMS4435BZ123
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FDMS4435BZ
  • Manufacturer No:
    FDMS4435BZ
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDMS4435BZ
  • SKU:
    4133615
  • Description:
    MOSFET P-Channel PowerTrench MOSFET

FDMS4435BZ Details

MOSFET P-Channel PowerTrench MOSFET

FDMS4435BZ Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Number of Terminations: 5
  • Gate to Source Voltage (Vgs): 25V
  • Transistor Element Material: SILICON
  • Length: 5mm
  • Operating Temperature: -55°C~150°C TJ
  • Lifecycle Status: ACTIVE (Last Updated: 3 days ago)
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Pulsed Drain Current-Max (IDM): 50A
  • Case Connection: DRAIN
  • Drain Current-Max (Abs) (ID): 9A
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • FET Type: P-Channel
  • JESD-30 Code: R-PDSO-F5
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Package / Case: 8-PowerTDFN
  • Vgs (Max): ±25V
  • Drain-source On Resistance-Max: 0.02Ohm
  • Power Dissipation: 39W
  • JEDEC-95 Code: MO-240AA
  • Weight: 74mg
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Number of Pins: 8
  • REACH SVHC: No SVHC
  • Published: 2006
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • Drain to Source Voltage (Vdss): 30V
  • Width: 6mm
  • Terminal Form: FLAT
  • Transistor Application: SWITCHING
  • Factory Lead Time: 26 Weeks
  • Subcategory: Other Transistors
  • Rise Time: 10 ns
  • Continuous Drain Current (ID): 9A
  • Turn-Off Delay Time: 35 ns
  • Height: 1.05mm
  • Turn On Delay Time: 9 ns
  • Drain to Source Breakdown Voltage: -30V
  • Series: PowerTrench?
  • Fall Time (Typ): 19 ns
  • Additional Feature: ULTRA-LOW RESISTANCE
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Threshold Voltage: -1.9V
  • Rds On (Max) @ Id, Vgs: 20m Ω @ 9A, 10V
  • Power Dissipation-Max: 2.5W Ta 39W Tc

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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