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FQD13N10LTM123
Inventory:4082
  • Qty Unit Price price
  • 1 $125.43 $125.43
  • 10 $124.188 $1241.88
  • 100 $122.958 $12295.8
  • 1000 $121.74 $121740
  • 10000 $120.534 $1205340

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FQD13N10LTM
  • Manufacturer No:
    FQD13N10LTM
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FQD13N10LTM
  • SKU:
    4055527
  • Description:
    MOSFET 100V N-Ch QFET Logic Level

FQD13N10LTM Details

MOSFET 100V N-Ch QFET Logic Level

FQD13N10LTM Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Form: GULL WING
  • Voltage - Rated DC: 100V
  • Factory Lead Time: 4 Weeks
  • Transistor Element Material: SILICON
  • Current Rating: 10A
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Pulsed Drain Current-Max (IDM): 40A
  • JESD-30 Code: R-PSSO-G2
  • Subcategory: FET General Purpose Power
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Height: 2.3mm
  • Turn-Off Delay Time: 22 ns
  • Series: QFET?
  • Drain-source On Resistance-Max: 0.2Ohm
  • Current - Continuous Drain (Id) @ 25°C: 10A Tc
  • Fall Time (Typ): 72 ns
  • Avalanche Energy Rating (Eas): 95 mJ
  • Power Dissipation-Max: 2.5W Ta 40W Tc
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 100V
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • Continuous Drain Current (ID): 10A
  • Threshold Voltage: 2V
  • Published: 2000
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Width: 6.1mm
  • Case Connection: DRAIN
  • Length: 6.6mm
  • Power Dissipation: 2.5W
  • Turn On Delay Time: 7.5 ns
  • Vgs(th) (Max) @ Id: 2V @ 250μA
  • Drive Voltage (Max Rds On,Min Rds On): 5V 10V
  • Rise Time: 220 ns
  • Weight: 260.37mg
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Rds On (Max) @ Id, Vgs: 180m Ω @ 5A, 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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