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FQP6N90C123
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FQP6N90C
  • Manufacturer No:
    FQP6N90C
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FQP6N90C
  • SKU:
    4035055
  • Description:
    MOSFET 900V N-Ch Q-FET advance C-Series

FQP6N90C Details

MOSFET 900V N-Ch Q-FET advance C-Series

FQP6N90C Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Threshold Voltage: 5V
  • Number of Terminations: 3
  • REACH SVHC: No SVHC
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • Factory Lead Time: 5 Weeks
  • Operating Temperature: -55°C~150°C TJ
  • Drain Current-Max (Abs) (ID): 6A
  • FET Type: N-Channel
  • Lifecycle Status: ACTIVE (Last Updated: 4 days ago)
  • Operating Mode: ENHANCEMENT MODE
  • Width: 4.7mm
  • JEDEC-95 Code: TO-220AB
  • Pulsed Drain Current-Max (IDM): 24A
  • Fall Time (Typ): 60 ns
  • Voltage - Rated DC: 900V
  • Dual Supply Voltage: 900V
  • Turn-Off Delay Time: 55 ns
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Nominal Vgs: 5 V
  • Weight: 1.8g
  • Current - Continuous Drain (Id) @ 25°C: 6A Tc
  • Power Dissipation-Max: 167W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Termination: Through Hole
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 30V
  • Published: 2003
  • Current Rating: 6A
  • Continuous Drain Current (ID): 6A
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Package / Case: TO-220-3
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 35 ns
  • Vgs (Max): ±30V
  • Height: 9.4mm
  • Drain to Source Breakdown Voltage: 900V
  • Length: 10.1mm
  • Rise Time: 90 ns
  • Series: QFET?
  • Resistance: 2.3Ohm
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Power Dissipation: 167W
  • Avalanche Energy Rating (Eas): 650 mJ
  • Rds On (Max) @ Id, Vgs: 2.3 Ω @ 3A, 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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