FQPF65N06 ON Semiconductor
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    FQPF65N06123
    • Manufacturer No：
      FQPF65N06
    • Manufacturer：
      ON Semiconductor
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      4129551
    • Description：
      MOSFET N-CH 60V 40A TO-220F
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    FQPF65N06
    • Manufacturer No：
      FQPF65N06
    • Manufacturer：
      ON Semiconductor
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      FQPF65N06
    • SKU：
      4129551
    • Description：
      MOSFET N-CH 60V 40A TO-220F

    User Guide

    User Guide

    FQPF65N06 Details

    MOSFET N-CH 60V 40A TO-220F

    FQPF65N06 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 60V
    • Factory Lead Time: 4 Weeks
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Transistor Element Material: SILICON
    • Published: 2001
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Current Rating: 40A
    • Length: 10.16mm
    • Subcategory: FET General Purpose Power
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Turn-Off Delay Time: 90 ns
    • Vgs (Max): ±25V
    • Rise Time: 160 ns
    • Power Dissipation: 56W
    • Current - Continuous Drain (Id) @ 25°C: 40A Tc
    • Weight: 2.27g
    • Power Dissipation-Max: 56W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Packaging: Tube
    • Number of Pins: 3
    • Voltage - Rated DC: 60V
    • Dual Supply Voltage: 60V
    • Gate to Source Voltage (Vgs): 25V
    • Terminal Finish: Tin (Sn)
    • Element Configuration: Single
    • Case Connection: ISOLATED
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Continuous Drain Current (ID): 40A
    • Width: 4.7mm
    • Turn On Delay Time: 20 ns
    • Package / Case: TO-220-3 Full Pack
    • Series: QFET?
    • Nominal Vgs: 4 V
    • Lifecycle Status: ACTIVE (Last Updated: 4 hours ago)
    • Fall Time (Typ): 105 ns
    • Height: 9.19mm
    • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
    • Rds On (Max) @ Id, Vgs: 16m Ω @ 20A, 10V
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