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HGTG30N60B3123
  • Manufacturer No:
    HGTG30N60B3
  • Manufacturer:
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4050527
  • Description:
    FAIRCHILD SEMICONDUCTOR HGTG30N60B3IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins
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HGTG30N60B3
  • Manufacturer No:
    HGTG30N60B3
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
    HGTG30N60B3
  • SKU:
    4050527
  • Description:
    FAIRCHILD SEMICONDUCTOR HGTG30N60B3IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins

HGTG30N60B3 Details

FAIRCHILD SEMICONDUCTOR HGTG30N60B3IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins

HGTG30N60B3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Transistor Element Material: SILICON
  • Input Type: Standard
  • Collector Emitter Breakdown Voltage: 600V
  • Max Breakdown Voltage: 600V
  • Gate-Emitter Thr Voltage-Max: 6V
  • Lifecycle Status: ACTIVE (Last Updated: 2 days ago)
  • Current Rating: 60A
  • Continuous Collector Current: 60A
  • Case Connection: COLLECTOR
  • Length: 15.87mm
  • Subcategory: Insulated Gate BIP Transistors
  • Collector Emitter Saturation Voltage: 1.45V
  • Current - Collector Pulsed (Icm): 220A
  • Turn On Time: 56 ns
  • Power Dissipation: 208W
  • Weight: 6.39g
  • Gate Charge: 170nC
  • Base Part Number: HGTG30N60
  • Test Condition: 480V, 30A, 3 Ω, 15V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Published: 2013
  • Factory Lead Time: 4 Weeks
  • Element Configuration: Single
  • Voltage - Rated DC: 600V
  • Collector Emitter Voltage (VCEO): 600V
  • Gate-Emitter Voltage-Max: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Polarity: NPN
  • Max Collector Current: 60A
  • Package / Case: TO-247-3
  • Fall Time-Max (tf): 150 ns
  • Transistor Application: POWER CONTROL
  • HTS Code: 8541.29.00.95
  • Width: 4.82mm
  • Additional Feature: LOW CONDUCTION LOSS
  • Height: 20.82mm
  • Max Power Dissipation: 208W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Turn Off Time-Nom (toff): 365 ns
  • Td (on/off) @ 25°C: 36ns/137ns
  • Switching Energy: 500μJ (on), 680μJ (off)

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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