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NIF9N05CLT1
  • Manufacturer No:
    NIF9N05CLT1
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    NIF9N05CLT1
  • SKU:
    4222688
  • Description:
    MOSFET 52V 2.6A N-Channel

NIF9N05CLT1 Details

MOSFET 52V 2.6A N-Channel

NIF9N05CLT1 Specification Parameters

  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Part Status: Obsolete
  • Number of Pins: 4
  • Pin Count: 4
  • Lead Free: Contains Lead
  • JESD-609 Code: e0
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Reach Compliance Code: not_compliant
  • Published: 2006
  • Gate to Source Voltage (Vgs): 15V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Case Connection: DRAIN
  • Voltage - Rated DC: 52V
  • Package / Case: TO-261-4, TO-261AA
  • Continuous Drain Current (ID): 2.6A
  • Additional Feature: LOGIC LEVEL COMPATIBLE
  • Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
  • Drain-source On Resistance-Max: 0.125Ohm
  • Power Dissipation: 1.69W
  • Vgs(th) (Max) @ Id: 2.5V @ 100μA
  • Drive Voltage (Max Rds On,Min Rds On): 3V 10V
  • Rise Time: 290ns
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 35V
  • Mount: Surface Mount
  • Number of Elements: 1
  • RoHS Status: Non-RoHS Compliant
  • Terminal Position: DUAL
  • Number of Terminations: 4
  • Pbfree Code: no
  • Qualification Status: Not Qualified
  • Terminal Form: GULL WING
  • Time@Peak Reflow Temperature-Max (s): 30
  • Terminal Finish: Tin/Lead (Sn/Pb)
  • Transistor Element Material: SILICON
  • Pulsed Drain Current-Max (IDM): 10A
  • Peak Reflow Temperature (Cel): 240
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Drain to Source Breakdown Voltage: 52V
  • Current Rating: 2.6A
  • Vgs (Max): ±15V
  • Lifecycle Status: OBSOLETE (Last Updated: 4 days ago)
  • Fall Time (Typ): 290 ns
  • Current - Continuous Drain (Id) @ 25°C: 2.6A Ta
  • Avalanche Energy Rating (Eas): 110 mJ
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Power Dissipation-Max: 1.69W Ta
  • Rds On (Max) @ Id, Vgs: 125m Ω @ 2.6A, 10V
  • Turn-Off Delay Time: 1.54 μs

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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