Add to like
Add to project list
NTF3055L108T3LF123
Inventory:0
  • Qty Unit Price price

Not the price you want? Send RFQ Now and we'll contact you ASAP

NTF3055L108T3LF
  • Manufacturer No:
    NTF3055L108T3LF
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    NTF3055L108T3LF
  • SKU:
    4232621
  • Description:
    MOSFET N-CH 60V 3A SOT223

NTF3055L108T3LF Details

MOSFET N-CH 60V 3A SOT223

NTF3055L108T3LF Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • RoHS Status: Non-RoHS Compliant
  • Terminal Position: DUAL
  • Number of Terminations: 4
  • Current Rating: 3A
  • Continuous Drain Current (ID): 3A
  • Qualification Status: Not Qualified
  • Terminal Form: GULL WING
  • Drain to Source Breakdown Voltage: 60V
  • Reach Compliance Code: not_compliant
  • Published: 2005
  • Gate to Source Voltage (Vgs): 15V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Pulsed Drain Current-Max (IDM): 9A
  • Rise Time: 35ns
  • Turn-Off Delay Time: 22 ns
  • Vgs (Max): ±15V
  • Power Dissipation: 2.1W
  • Current - Continuous Drain (Id) @ 25°C: 3A Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Avalanche Energy Rating (Eas): 74 mJ
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Part Status: Obsolete
  • Drive Voltage (Max Rds On,Min Rds On): 5V
  • Pin Count: 4
  • Drain Current-Max (Abs) (ID): 3A
  • Lead Free: Contains Lead
  • JESD-609 Code: e0
  • Voltage - Rated DC: 60V
  • Time@Peak Reflow Temperature-Max (s): 30
  • Terminal Finish: Tin/Lead (Sn/Pb)
  • Transistor Element Material: SILICON
  • Peak Reflow Temperature (Cel): 240
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Subcategory: FET General Purpose Power
  • JESD-30 Code: R-PDSO-G4
  • Package / Case: TO-261-4, TO-261AA
  • Vgs(th) (Max) @ Id: 2V @ 250μA
  • Fall Time (Typ): 27 ns
  • Drain-source On Resistance-Max: 0.12Ohm
  • Power Dissipation-Max: 1.3W Ta
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Rds On (Max) @ Id, Vgs: 120m Ω @ 1.5A, 5V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via