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NTGD3133PT1G123
Inventory:9000
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  • 100 $0.308 $30.8
  • 1000 $0.304 $304
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NTGD3133PT1G
  • Manufacturer No:
    NTGD3133PT1G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    NTGD3133PT1G
  • SKU:
    3641019
  • Description:
    Mosfet Array 2 P-Channel (Dual) 20V 1.6A 560mW Surface Mount 6-TSOP

NTGD3133PT1G Details

Mosfet Array 2 P-Channel (Dual) 20V 1.6A 560mW Surface Mount 6-TSOP

NTGD3133PT1G Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Number of Terminations: 6
  • Pin Count: 6
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Published: 2006
  • Transistor Element Material: SILICON
  • Operating Temperature: -55°C~150°C TJ
  • Drain Current-Max (Abs) (ID): 2.5A
  • Subcategory: Other Transistors
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • FET Feature: Logic Level Gate
  • Lifecycle Status: LAST SHIPMENTS (Last Updated: 2 days ago)
  • Max Power Dissipation: 560mW
  • Fall Time (Typ): 12.7 ns
  • Drain-source On Resistance-Max: 0.145Ohm
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
  • Rise Time: 12.7ns
  • Number of Elements: 2
  • Mount: Surface Mount
  • RoHS Status: RoHS Compliant
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Qualification Status: Not Qualified
  • Number of Pins: 6
  • Terminal Form: GULL WING
  • Gate to Source Voltage (Vgs): 12V
  • Element Configuration: Dual
  • Terminal Finish: Tin (Sn)
  • Drain to Source Voltage (Vdss): 20V
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Polarity/Channel Type: N-CHANNEL
  • Continuous Drain Current (ID): 1.6A
  • Drain to Source Breakdown Voltage: -20V
  • Power Dissipation: 1.1W
  • FET Type: 2 P-Channel (Dual)
  • Vgs(th) (Max) @ Id: 1.4V @ 250μA
  • Turn-Off Delay Time: 13.2 ns
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 145m Ω @ 2.2A, 4.5V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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