HYB25DC512160CE-6QIMONDA AG
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    HYB25DC512160CE-6123
    • Manufacturer No：
      HYB25DC512160CE-6
    • Manufacturer：
      QIMONDA AG
    • Category：
    • Datasheet：
    • SKU：
      11540631
    • Description：
    • Quantity：
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    HYB25DC512160CE-6
    • Manufacturer No：
      HYB25DC512160CE-6
    • Manufacturer：
      QIMONDA AG
    • Category：
    • Datasheet：
      HYB25DC512160CE-6
    • SKU：
      11540631
    • Description：

    User Guide

    User Guide

    HYB25DC512160CE-6 Details

    HYB25DC512160CE-6 Specification Parameters

    • Number of Functions: 1
    • Moisture Sensitivity Level (MSL): 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Temperature Grade: COMMERCIAL
    • Memory Width: 16
    • Technology: CMOS
    • Supply Voltage: 2.5V
    • Terminal Finish: Matte Tin (Sn)
    • Time@Peak Reflow Temperature-Max (s): 40
    • Supply Voltage-Max (Vsup): 2.7V
    • Output Characteristics: 3-STATE
    • Number of Terminals: 66
    • Supply Voltage-Min (Vsup): 2.3V
    • I/O Type: COMMON
    • Refresh Cycles: 8192
    • Length: 22.22mm
    • Interleaved Burst Length: 248
    • Access Time (Max): 0.7 ns
    • Subcategory: DRAMs
    • Supply Current-Max: 0.23mA
    • Memory IC Type: DDR DRAM
    • Standby Current-Max: 0.0046A
    • Number of Ports: 1
    • RoHS Status: RoHS Compliant
    • Surface Mount: YES
    • Terminal Position: DUAL
    • Qualification Status: Not Qualified
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Power Supplies: 2.5V
    • Operating Temperature (Max): 70°C
    • Terminal Pitch: 0.65mm
    • Seated Height-Max: 1.2mm
    • Pin Count: 66
    • Width: 10.16mm
    • Operating Mode: SYNCHRONOUS
    • Clock Frequency: 166MHz
    • Additional Feature: AUTO/SELF REFRESH
    • Sequential Burst Length: 248
    • Memory Density: 536870912 bit
    • Organization: 32MX16
    • HTS Code: 8542.32.00.28
    • Access Mode: FOUR BANK PAGE BURST
    • JESD-30 Code: R-PDSO-G66
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