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- Manufacturer No：HAT2070R-EL-E
- Manufacturer：RENESAS ELECTRONICS CORP
- Category：
- Datasheet：HAT2070R-EL-E
- SKU：11537387
- Description：
User Guide
User Guide
HAT2070R-EL-E Details
HAT2070R-EL-E Specification Parameters
- Number of Elements: 1
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- Pin Count: 8
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 20
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 30V
- Transistor Application: SWITCHING
- JESD-30 Code: R-PDSO-G8
- Subcategory: FET General Purpose Power
- Power Dissipation-Max (Abs): 2.5W
- Pulsed Drain Current-Max (IDM): 96A
- Moisture Sensitivity Level (MSL): 1
- ECCN Code: EAR99
- Surface Mount: YES
- Number of Terminals: 8
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Operating Temperature (Max): 150°C
- Reach Compliance Code: compliant
- Drain Current-Max (Abs) (ID): 12A
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Polarity/Channel Type: N-CHANNEL
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max: 0.022Ohm
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