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- Manufacturer No：UPA1764G
- Manufacturer：RENESAS ELECTRONICS CORP
- Category：
- Datasheet：UPA1764G
- SKU：11568787
- Description：
User Guide
User Guide
UPA1764G Details
UPA1764G Specification Parameters
- Number of Elements: 2
- RoHS Status: Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Pin Count: 8
- Terminal Position: DUAL
- JESD-609 Code: e0
- DS Breakdown Voltage-Min: 60V
- Terminal Finish: Tin/Lead (Sn/Pb)
- Power Dissipation-Max (Abs): 2W
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas): 98 mJ
- ECCN Code: EAR99
- Surface Mount: YES
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminals: 8
- Qualification Status: Not Qualified
- Terminal Form: GULL WING
- Operating Temperature (Max): 150°C
- Transistor Element Material: SILICON
- Reach Compliance Code: compliant
- Drain Current-Max (Abs) (ID): 7A
- JESD-30 Code: R-PDSO-G8
- Polarity/Channel Type: N-CHANNEL
- Pulsed Drain Current-Max (IDM): 28A
- Drain-source On Resistance-Max: 0.046Ohm
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