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- Manufacturer No：IRF830B
- Manufacturer：ROCHESTER ELECTRONICS LLC
- Category：
- Datasheet：IRF830B
- SKU：11430055
- Description：
User Guide
User Guide
IRF830B Details
IRF830B Specification Parameters
- Surface Mount: NO
- RoHS Status: RoHS Compliant
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pin Count: 3
- Qualification Status: COMMERCIAL
- Terminal Position: SINGLE
- Terminal Finish: MATTE TIN
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code: TO-220AB
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max: 1.5Ohm
- Avalanche Energy Rating (Eas): 270 mJ
- Number of Elements: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Moisture Sensitivity Level (MSL): NOT SPECIFIED
- Number of Terminals: 3
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 500V
- Transistor Application: SWITCHING
- Terminal Form: THROUGH-HOLE
- Drain Current-Max (Abs) (ID): 4.5A
- Polarity/Channel Type: N-CHANNEL
- JESD-30 Code: R-PSFM-T3
- Pulsed Drain Current-Max (IDM): 18A
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