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2SD2702TL123
  • Manufacturer No:
    2SD2702TL
  • Manufacturer:
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    10559190
  • Description:
    TRANS NPN 12V 1.5A TUMT3
  • Quantity:
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  • Qty Unit Price price
  • 1 $0.346 $0.346
  • 10 $0.342 $3.42
  • 100 $0.338 $33.8
  • 1000 $0.334 $334
  • 10000 $0.33 $3300

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2SD2702TL
  • Manufacturer No:
    2SD2702TL
  • Manufacturer:
    ROHM
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    2SD2702TL
  • SKU:
    10559190
  • Description:
    TRANS NPN 12V 1.5A TUMT3

2SD2702TL Details

TRANS NPN 12V 1.5A TUMT3

2SD2702TL Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Qualification Status: Not Qualified
  • Time@Peak Reflow Temperature-Max (s): 10
  • Collector Emitter Voltage (VCEO): 12V
  • Factory Lead Time: 13 Weeks
  • Transistor Element Material: SILICON
  • Collector Base Voltage (VCBO): 15V
  • Max Collector Current: 1.5A
  • Polarity/Channel Type: NPN
  • Operating Temperature: 150°C TJ
  • Contact Plating: Copper, Tin
  • Transition Frequency: 400MHz
  • Power - Max: 800mW
  • Transistor Application: AMPLIFIER
  • HTS Code: 8541.21.00.75
  • Package / Case: 3-SMD, Flat Lead
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA 2V
  • Base Part Number: 2SD2702
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Number of Terminations: 3
  • Pin Count: 3
  • Peak Reflow Temperature (Cel): 260
  • Collector Emitter Breakdown Voltage: 12V
  • Max Breakdown Voltage: 12V
  • Published: 2007
  • Element Configuration: Single
  • Emitter Base Voltage (VEBO): 6V
  • Transistor Type: NPN
  • JESD-609 Code: e2
  • Subcategory: Other Transistors
  • Gain Bandwidth Product: 400MHz
  • Max Power Dissipation: 800mW
  • Terminal Finish: Tin/Copper (Sn/Cu)
  • Current - Collector Cutoff (Max): 100nA ICBO
  • hFE Min: 270
  • Collector Emitter Saturation Voltage: 85mV
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA

ROHM — Manufacturer Introduction

ROHM
ROHM was established in Kyoto, Japan, in 1958. ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets. Some of the most innovative equipment and devices use ROHM products. ROHM's presence in the North American market continues to expand with a logistic headquarters in San Diego, California, a design center in San Jose, California, a QA Center in Novi, Michigan, a sales office in Guadalajara, Mexico and a sales network that covers marketing, sales, and engineering support for the North and South American clients from Canada to Brazil. In addition to a direct sales force, ROHM enjoys the collaboration of several sales-representative organizations and industry leading electronics distributors. For more than forty years, ROHM has stayed focused on the fundamental philosophy of customization. The company has worked closely with equipment manufacturers to develop next generation equipment and use the technology acquired through these efforts to propose system solutions to its customers and continually provide them with high added values. The majority of ROHM's manufacturing equipment has been developed in-house. This has given ROHM the ability to respond immediately to changing market needs. The extent of ROHM products is a result of innovations and the capability to adjust to market demands. Automotive, telecommunication, computer, and consumer OEMs are among the leading end users of ROHM products.

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