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US6K2TR123
  • Manufacturer No:
    US6K2TR
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    10631407
  • Description:
    MOSFET 2N-CH 30V 1.4A TUMT6
  • Quantity:
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Inventory:6617
  • Qty Unit Price price
  • 1 $104.064 $104.064
  • 10 $103.033 $1030.33
  • 100 $102.012 $10201.2
  • 1000 $101.001 $101001
  • 10000 $100 $1000000

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US6K2TR
  • Manufacturer No:
    US6K2TR
  • Manufacturer:
    ROHM
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    US6K2TR
  • SKU:
    10631407
  • Description:
    MOSFET 2N-CH 30V 1.4A TUMT6

US6K2TR Details

MOSFET 2N-CH 30V 1.4A TUMT6

US6K2TR Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Number of Pins: 6
  • Factory Lead Time: 16 Weeks
  • Time@Peak Reflow Temperature-Max (s): 10
  • Power Dissipation: 1W
  • Published: 2007
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Breakdown Voltage: 30V
  • Operating Mode: ENHANCEMENT MODE
  • Operating Temperature: 150°C TJ
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Continuous Drain Current (ID): 1.4A
  • Terminal Finish: Tin/Copper (Sn/Cu)
  • Turn On Delay Time: 6 ns
  • FET Feature: Logic Level Gate
  • Package / Case: 6-SMD, Flat Leads
  • Resistance: 380mOhm
  • Base Part Number: *K2
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Number of Terminations: 6
  • Pin Count: 6
  • Peak Reflow Temperature (Cel): 260
  • Max Power Dissipation: 1W
  • Element Configuration: Dual
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 30V
  • Transistor Application: SWITCHING
  • JESD-609 Code: e2
  • Subcategory: FET General Purpose Power
  • Current Rating: 1.4A
  • Rise Time: 6ns
  • Fall Time (Typ): 8 ns
  • Turn-Off Delay Time: 13 ns
  • FET Type: 2 N-Channel (Dual)
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
  • Rds On (Max) @ Id, Vgs: 240m Ω @ 1.4A, 10V

ROHM — Manufacturer Introduction

ROHM
ROHM was established in Kyoto, Japan, in 1958. ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets. Some of the most innovative equipment and devices use ROHM products. ROHM's presence in the North American market continues to expand with a logistic headquarters in San Diego, California, a design center in San Jose, California, a QA Center in Novi, Michigan, a sales office in Guadalajara, Mexico and a sales network that covers marketing, sales, and engineering support for the North and South American clients from Canada to Brazil. In addition to a direct sales force, ROHM enjoys the collaboration of several sales-representative organizations and industry leading electronics distributors. For more than forty years, ROHM has stayed focused on the fundamental philosophy of customization. The company has worked closely with equipment manufacturers to develop next generation equipment and use the technology acquired through these efforts to propose system solutions to its customers and continually provide them with high added values. The majority of ROHM's manufacturing equipment has been developed in-house. This has given ROHM the ability to respond immediately to changing market needs. The extent of ROHM products is a result of innovations and the capability to adjust to market demands. Automotive, telecommunication, computer, and consumer OEMs are among the leading end users of ROHM products.

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