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- Manufacturer No：STB12NM50FDT4
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB12NM50FDT4
- SKU：4601337
- Description：MOSFET N-Ch 500 Volt 12 Amp
User Guide
User Guide
STB12NM50FDT4 Details
MOSFET N-Ch 500 Volt 12 Amp
STB12NM50FDT4 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- JESD-609 Code: e3
- Part Status: Obsolete
- Pin Count: 3
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 500V
- FET Type: N-Channel
- Current Rating: 12A
- Transistor Application: SWITCHING
- Operating Temperature: -65°C~150°C TJ
- Rise Time: 10ns
- Subcategory: FET General Purpose Power
- Vgs (Max): ±30V
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Pulsed Drain Current-Max (IDM): 48A
- Drain-source On Resistance-Max: 0.4Ohm
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Power Dissipation-Max: 160W Tc
- Series: FDmesh?
- Base Part Number: STB12N
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Pins: 3
- Qualification Status: Not Qualified
- Terminal Finish: Matte Tin (Sn)
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Voltage - Rated DC: 500V
- Gate to Source Voltage (Vgs): 30V
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 12A
- Operating Mode: ENHANCEMENT MODE
- Peak Reflow Temperature (Cel): 245
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ): 18 ns
- Power Dissipation: 160W
- Turn-Off Delay Time: 39 ns
- Current - Continuous Drain (Id) @ 25°C: 12A Tc
- Avalanche Energy Rating (Eas): 400 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
- Rds On (Max) @ Id, Vgs: 400m Ω @ 6A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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