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STB12NM50N123
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STB12NM50N
  • Manufacturer No:
    STB12NM50N
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STB12NM50N
  • SKU:
    4578824
  • Description:
    Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK T/R

STB12NM50N Details

Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK T/R

STB12NM50N Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Pin Count: 3
  • Termination: SMD/SMT
  • Time@Peak Reflow Temperature-Max (s): 30
  • Gate to Source Voltage (Vgs): 25V
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 500V
  • Dual Supply Voltage: 500V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Terminal Finish: Matte Tin (Sn) - annealed
  • Operating Temperature: 150°C TJ
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 15 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Continuous Drain Current (ID): 11A
  • Fall Time (Typ): 14 ns
  • Vgs (Max): ±25V
  • Resistance: 380mOhm
  • Current - Continuous Drain (Id) @ 25°C: 11A Tc
  • Series: MDmesh? II
  • Base Part Number: STB12N
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Threshold Voltage: 3V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 500V
  • Power Dissipation: 100W
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Peak Reflow Temperature (Cel): 245
  • JESD-30 Code: R-PSSO-G2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Rise Time: 15ns
  • Current Rating: 11A
  • Turn-Off Delay Time: 60 ns
  • Nominal Vgs: 3 V
  • Pulsed Drain Current-Max (IDM): 44A
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Power Dissipation-Max: 100W Tc
  • Rds On (Max) @ Id, Vgs: 380m Ω @ 5.5A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 50V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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