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- Manufacturer No：STD11N65M2
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STD11N65M2
- SKU：4572975
- Description：STMICROELECTRONICS STD11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
User Guide
User Guide
STD11N65M2 Details
STMICROELECTRONICS STD11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
STD11N65M2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Pins: 3
- Factory Lead Time: 16 Weeks
- Gate to Source Voltage (Vgs): 25V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Continuous Drain Current (ID): 7A
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Vgs (Max): ±25V
- Rise Time: 7.5ns
- Current - Continuous Drain (Id) @ 25°C: 7A Tc
- Series: MDmesh? II Plus
- Base Part Number: STD11
- Rds On (Max) @ Id, Vgs: 670m Ω @ 3.5A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- REACH SVHC: No SVHC
- Threshold Voltage: 3V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Fall Time (Typ): 15 ns
- Turn On Delay Time: 9.5 ns
- Turn-Off Delay Time: 26 ns
- Weight: 3.949996g
- Power Dissipation-Max: 85W Tc
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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