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- Manufacturer No：STD3NM60-1
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STD3NM60-1
- SKU：4544194
- Description：MOSFET N-CH 600V 3A IPAK
User Guide
User Guide
STD3NM60-1 Details
MOSFET N-CH 600V 3A IPAK
STD3NM60-1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Continuous Drain Current (ID): 3A
- Peak Reflow Temperature (Cel): 260
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Power Dissipation: 42W
- Avalanche Energy Rating (Eas): 200 mJ
- Power Dissipation-Max: 42W Tc
- Base Part Number: STD3N
- Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 25V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- Drain Current-Max (Abs) (ID): 3A
- Qualification Status: Not Qualified
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Operating Temperature: -65°C~150°C TJ
- Vgs (Max): ±30V
- Rise Time: 4ns
- Fall Time (Typ): 10.5 ns
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 3A Tc
- Series: MDmesh?
- Rds On (Max) @ Id, Vgs: 1.5 Ω @ 1.5A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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