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- Manufacturer No：STI26NM60N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STI26NM60N
- SKU：4570154
- Description：MOSFET N-CH 600V 20A I2PAK
User Guide
User Guide
STI26NM60N Details
MOSFET N-CH 600V 20A I2PAK
STI26NM60N Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- DS Breakdown Voltage-Min: 600V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Temperature: 150°C TJ
- Width: 4.6mm
- Length: 10.4mm
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Turn-Off Delay Time: 85 ns
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Series: MDmesh? II
- Drain-source On Resistance-Max: 0.165Ohm
- Rds On (Max) @ Id, Vgs: 165m Ω @ 10A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Packaging: Tube
- Number of Pins: 3
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 600V
- Continuous Drain Current (ID): 20A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 80A
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 13 ns
- Vgs (Max): ±25V
- Current - Continuous Drain (Id) @ 25°C: 20A Tc
- Power Dissipation-Max: 140W Tc
- Height: 10.75mm
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
- Avalanche Energy Rating (Eas): 610 mJ
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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