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- Manufacturer No：STP11NM60N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP11NM60N
- SKU：4565100
- Description：MOSFET N-CH 600V 10A TO-220
User Guide
User Guide
STP11NM60N Details
MOSFET N-CH 600V 10A TO-220
STP11NM60N Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Threshold Voltage: 3V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Voltage - Rated DC: 600V
- Current Rating: 10A
- Case Connection: ISOLATED
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- Turn-Off Delay Time: 50 ns
- Fall Time (Typ): 12 ns
- Power Dissipation: 90W
- Resistance: 450mOhm
- Rise Time: 18.5 ns
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Power Dissipation-Max: 90W Tc
- Base Part Number: STP11N
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Gate to Source Voltage (Vgs): 25V
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- Continuous Drain Current (ID): 10A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Pulsed Drain Current-Max (IDM): 40A
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 22 ns
- Vgs (Max): ±25V
- Current - Continuous Drain (Id) @ 25°C: 10A Tc
- Avalanche Energy Rating (Eas): 200 mJ
- Series: MDmesh? II
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V
- Rds On (Max) @ Id, Vgs: 450m Ω @ 5A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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