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- Manufacturer No：STP3NB100
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP3NB100
- SKU：4579356
- Description：MOSFET N-CH 1KV 3A TO-220
User Guide
User Guide
STP3NB100 Details
MOSFET N-CH 1KV 3A TO-220
STP3NB100 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Pin Count: 3
- Drain Current-Max (Abs) (ID): 3A
- Lead Free: Contains Lead
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Power Dissipation: 100W
- Drain to Source Breakdown Voltage: 1kV
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Drain to Source Voltage (Vdss): 1000V
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drain-source On Resistance-Max: 6Ohm
- Fall Time (Typ): 28 ns
- Power Dissipation-Max: 100W Tc
- Current - Continuous Drain (Id) @ 25°C: 3A Tc
- Base Part Number: STP3N
- Avalanche Energy Rating (Eas): 244 mJ
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Current Rating: 3A
- Continuous Drain Current (ID): 3A
- Qualification Status: Not Qualified
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 30V
- Voltage - Rated DC: 1kV
- FET Type: N-Channel
- Pulsed Drain Current-Max (IDM): 12A
- Operating Mode: ENHANCEMENT MODE
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- JESD-30 Code: R-PSFM-T3
- Vgs (Max): ±30V
- Rise Time: 12ns
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Series: PowerMESH?
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Rds On (Max) @ Id, Vgs: 6 Ω @ 1.5A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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