Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
- 1 $1.625 $1.625
- 10 $1.608 $16.08
- 100 $1.592 $159.2
- 1000 $1.576 $1576
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：STP55NF06
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP55NF06
- SKU：4586927
- Description：Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube
User Guide
User Guide
STP55NF06 Details
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube
STP55NF06 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Voltage - Rated DC: 60V
- Dual Supply Voltage: 60V
- Threshold Voltage: 3V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 50A
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Fall Time (Typ): 15 ns
- Turn On Delay Time: 20 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Weight: 4.535924g
- Nominal Vgs: 3 V
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Current - Continuous Drain (Id) @ 25°C: 50A Tc
- Power Dissipation-Max: 110W Tc
- Series: STripFET? II
- Rds On (Max) @ Id, Vgs: 18m Ω @ 27.5A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 60V
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Current Rating: 50A
- Power Dissipation: 30W
- Subcategory: FET General Purpose Power
- Rise Time: 50 ns
- Pulsed Drain Current-Max (IDM): 200A
- Width: 4.6mm
- Length: 10.4mm
- Drain Current-Max (Abs) (ID): 55A
- Resistance: 18mOhm
- Turn-Off Delay Time: 36 ns
- Height: 9.15mm
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Base Part Number: STP55N
Search for similar products
STP55NF06 Similar Products
The four parts on the right have similar specifications to STMicroelectronics & STP55NF06
STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
