Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：STP8NM60N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP8NM60N
- SKU：4552427
- Description：MOSFET N-CH 600V 7A TO-220
User Guide
User Guide
STP8NM60N Details
MOSFET N-CH 600V 7A TO-220
STP8NM60N Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 7A
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- JESD-30 Code: R-PSFM-T3
- Turn-Off Delay Time: 40 ns
- Rise Time: 12ns
- Vgs (Max): ±25V
- Resistance: 650mOhm
- Avalanche Energy Rating (Eas): 200 mJ
- Series: MDmesh? II
- Base Part Number: STP8N
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Reach Compliance Code: not_compliant
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Drain Current-Max (Abs) (ID): 7A
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 10 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Additional Feature: AVALANCHE RATED
- Pulsed Drain Current-Max (IDM): 28A
- Power Dissipation: 70W
- Current - Continuous Drain (Id) @ 25°C: 7A Tc
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Power Dissipation-Max: 70W Tc
- Rds On (Max) @ Id, Vgs: 650m Ω @ 3.5A, 10V
Search for similar products
STP8NM60N Similar Products
The four parts on the right have similar specifications to STMicroelectronics & STP8NM60N
STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
