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- Manufacturer No：STU8NM50N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STU8NM50N
- SKU：4561466
- Description：MOSFET N-CH 500V 5A IPAK
User Guide
User Guide
STU8NM50N Details
MOSFET N-CH 500V 5A IPAK
STU8NM50N Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 25V
- Continuous Drain Current (ID): 5A
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 500V
- Pulsed Drain Current-Max (IDM): 20A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- Turn-Off Delay Time: 25 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Height: 6.9mm
- Vgs (Max): ±25V
- Fall Time (Typ): 8.8 ns
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Series: MDmesh? II
- Drain-source On Resistance-Max: 0.79Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 50V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Threshold Voltage: 3V
- Drain Current-Max (Abs) (ID): 5A
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- DS Breakdown Voltage-Min: 500V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- Configuration: SINGLE WITH BUILT-IN DIODE
- Length: 6.6mm
- Width: 2.4mm
- Turn On Delay Time: 7 ns
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Rise Time: 4.4 ns
- Power Dissipation-Max: 45W Tc
- Current - Continuous Drain (Id) @ 25°C: 5A Tc
- Avalanche Energy Rating (Eas): 140 mJ
- Rds On (Max) @ Id, Vgs: 790m Ω @ 2.5A, 10V
- Base Part Number: STU8N
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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