Add to like
Add to project list
STW18NM60N123
Inventory:535
  • Qty Unit Price price
  • 1 $6.371 $6.371
  • 10 $6.307 $63.07
  • 100 $6.244 $624.4
  • 1000 $6.182 $6182
  • 10000 $6.12 $61200

Not the price you want? Send RFQ Now and we'll contact you ASAP

STW18NM60N
  • Manufacturer No:
    STW18NM60N
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STW18NM60N
  • SKU:
    4547099
  • Description:
    MOSFET N-CH 600V 13A TO-247

STW18NM60N Details

MOSFET N-CH 600V 13A TO-247

STW18NM60N Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Threshold Voltage: 3V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Drain to Source Voltage (Vdss): 600V
  • Terminal Position: SINGLE
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Fall Time (Typ): 25 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Package / Case: TO-247-3
  • Turn-Off Delay Time: 55 ns
  • Vgs (Max): ±25V
  • Pulsed Drain Current-Max (IDM): 52A
  • Width: 5.15mm
  • Current - Continuous Drain (Id) @ 25°C: 13A Tc
  • Height: 20.15mm
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V
  • Rds On (Max) @ Id, Vgs: 285m Ω @ 6.5A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 3
  • Pin Count: 3
  • Factory Lead Time: 16 Weeks
  • Gate to Source Voltage (Vgs): 25V
  • Transistor Element Material: SILICON
  • DS Breakdown Voltage-Min: 600V
  • Continuous Drain Current (ID): 13A
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Terminal Finish: Matte Tin (Sn) - annealed
  • Subcategory: FET General Purpose Power
  • Rise Time: 15 ns
  • Turn On Delay Time: 12 ns
  • Power Dissipation: 80W
  • Length: 15.75mm
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Power Dissipation-Max: 110W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Series: MDmesh? II
  • Resistance: 285mOhm
  • Base Part Number: STW18N

STMicroelectronics — Manufacturer Introduction

STMicroelectronics
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via